Modification Of The Properties Of Cadmium

Polycrystalline cadmium selenide, CdSe, thin films were prepared by chemical bath deposition (CBD) technique. The films were deposited using cadmium chloride as a Cd+2 ion source, and sodium selenosulphite as a Se-2 ion source. Annealing the films in air for 10 minutes at 100 0C-350 0C affected the grain growth. The annealed films were returned to room temperature either by quenching or slow cooling. The energy band gap (Eg) decreased with increasing thicknesses and substrate temperatures. Value of Eg calculated from UV/visible absorption spectra ranged between 2 and 1.83 eV. The used film thickness was ~10m. Annealing and rate of cooling that present the best photoluminescence (PL), photo and dark currents for the film electrodes are discussed here. Covering CdSe thin films with metalloporphyrine complex, embedded inside polymeric polysiloxane matrices, enhanced the electrode efficiency and stability. The deposited films were investigated by optical PL and UV absorption spectra.